Structural influence on electrical properties of metal-oxide-metal devices
- 1 November 1972
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 13 (2) , 231-236
- https://doi.org/10.1016/0040-6090(72)90288-x
Abstract
No abstract availableKeywords
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- Analyse stœchiométrique de couches évaporées d'oxyde de silicium par observation simultanée des réactions nucléaires (d, p) sur l'oxygène et le siliciumRevue de Physique Appliquée, 1971
- A model for filament growth and switching in amorphous oxide filmsJournal of Non-Crystalline Solids, 1970
- Zur Kenntnis der SiO- und Si 2 O 3 -Phase in Dünnen SchichtenOptica Acta: International Journal of Optics, 1962