Computer Simulation in Silicon Epitaxy

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Abstract
A computer model capable of simulating epitaxial doping profiles resulting from a variety of deposition conditions, including time‐varying dopant gas flows during growth, is described. The model takes into account gas‐phase dynamics, physicochemical processes at the growing epitaxial surface, and thermal redistribution of impurities during epitaxial growth. The techniques employed to obtain experimentally the values of the parameters in the computer model are described. The numerical implementation of the model in the process simulation program SUPREM is also described. Finally, numerical simulations using the model are compared to epitaxial doping profiles obtained experimentally.

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