Thermal stability of oxide films on Cd0.2 Hg0.8Te: A combined SIMS, AES, and XPS study
- 1 April 1983
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 1 (2) , 657-661
- https://doi.org/10.1116/1.572203
Abstract
In previous work, the structure of anodic oxide layers on Cd0.2 Hg0.8Te (MCT) has been determined. The stability of these features against heat treatment at 520 K under UHV conditions has been investigated. The layer is thermally decomposed by diffusion of oxygen into the semiconductor. As a consequence, the characteristic structure of the interface is shifted towards the surface, whereas the composition above this structure remains unchanged.Keywords
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