Back surface field effects in the 17.3% efficient n-type dendritic web silicon solar cells
- 1 September 1998
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 42 (9) , 1631-1640
- https://doi.org/10.1016/s0038-1101(98)00096-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Record high 18.6% efficient solar cell on HEM multicrystalline materialPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Use of high back surface reflectance in PV cell designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- PC1D version 4 for Windows: from analysis to designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1996
- Unified apparent bandgap narrowing in n- and p-type siliconSolid-State Electronics, 1992
- Minority-carrier transport parameters in degenerate n-type siliconIEEE Electron Device Letters, 1990
- Simultaneous Junction Formation Using a Directed Energy Light SourceJournal of the Electrochemical Society, 1986
- Measurement of electron lifetime, electron mobility and band-gap narrowing in heavily doped p-type siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986
- Design, fabrication, and analysis of 17-18-percent efficient surface-passivated silicon solar cellsIEEE Transactions on Electron Devices, 1984
- The open-circuit voltage of back-surface-field (BSF) p-n junction solar cells in concentrated sunlightSolid-State Electronics, 1980
- Auger coefficients for highly doped and highly excited siliconApplied Physics Letters, 1977