High-speed InP optoelectronic switch
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9) , 712-714
- https://doi.org/10.1063/1.91265
Abstract
The successful fabrication and demonstration of an InP optoelectronic switch is reported. The results obtained suggest that this device may be better suited for high‐speed analog signal processing applications than previously reported Si and GaAs switches. In experiments using cw mode‐locked lasers, the switches have exhibited an on‐state impedance of 45 Ω for 40pJ of incident laser energy and an inherent rise time of 30 psec. In addition, the switches have been used to generate a train of 70‐psec‐wide pulses at a 900‐MHz repetition rate, and to sample a 68.9‐MHz sine wave at 275 MS/sec with an accuracy to 0.2 dB (98%) and an on‐off ratio of 40 dB.Keywords
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