Effect of resistivity and current density on photoluminescence in porous silicon produced at low HF concentration
- 1 December 1998
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 84 (11) , 6345-6350
- https://doi.org/10.1063/1.368960
Abstract
No abstract availableThis publication has 30 references indexed in Scilit:
- Hole burning spectroscopy of porous siliconPhysical Review B, 1998
- Relationship of Processing Parameters to Photoluminescence Intensity and Mechanical Failure in Thick Porous Silicon LayersJournal of the Electrochemical Society, 1997
- Critical behavior and the processing of nanoscale porous materialsAdvanced Materials, 1997
- Correlation of photoluminescence spectra and structure of porous siliconSemiconductor Science and Technology, 1996
- Ultrafast Carrier Dynamics in Porous SiliconPhysica Status Solidi (b), 1995
- Porosity superlattices: a new class of Si heterostructuresJournal of Physics D: Applied Physics, 1994
- Luminescent anodized silicon aerocrystal networks prepared by supercritical dryingNature, 1994
- Observation of Optical Cavity Modes in Photoluminescent Porous Silicon FilmsJournal of the Electrochemical Society, 1993
- Structured Photoluminescence Spectrum in Laterally Anodized Porous SiliconJapanese Journal of Applied Physics, 1992
- Mechanism of Pore Formation on n‐Type SiliconJournal of the Electrochemical Society, 1991