Low-temperature growth of midwavelength infrared liquid phase epitaxy HgCdTe on sapphire
- 1 May 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 9 (3) , 1661-1666
- https://doi.org/10.1116/1.585397
Abstract
Consistently low dislocation density midwavelength infrared (x=0.31) liquid phase epitaxy HgCdTe epitaxial layers with excellent morphology were grown on 2 in. sapphire substrates (PACE‐1) using a new low‐temperature (420 °C) Te melt process. Surface etch pit densities (EPDs) between 5×105 and 9×105 cm−2 were revealed using a previously reported chemical etch [J. S. Chen, US Patent No. 4897152] on a 20‐layer sample set. Cross‐sectional EPD profiles reveal a more rapid decrease of defects from the CdTe buffer layer interface as compared to conventionally grown (500 °C) material. X‐ray rocking curve widths from 43 to 66 arcsec were routinely observed. 77 K electron mobilities as high as 51 000 cm2/V‐s were measured. Secondary‐ion mass spectrometry profiles show a minimum of impurity gettering at the HgCdTe/CdTe buffer layer interface.Keywords
This publication has 0 references indexed in Scilit: