Investigation of bulk laser damage threshold of lithium niobate single crystals by Q-switched pulse laser
- 1 March 1991
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (5) , 3372-3374
- https://doi.org/10.1063/1.348537
Abstract
Bulk laser damage threshold of 2-in.-diam. MgO-doped LiNbO3 crystals grown using the Czochralski technique has been measured using a Q-switched Nd3+:LiYF4 laser. The threshold showed dependence on the crystal quality. The highest bulk laser damage threshold (14 J/cm2 at 1.053 μm wavelength with 1-ns pulse width) was obtained in the LiNbO3 crystal doped with 1 mol % of MgO. The lowering of bulk laser damage threshold was observed in the crystals doped with MgO at more than 3 mol %. These crystals contained the local aggregations of MgO which increased the scattering centers and decreased the transparency.This publication has 5 references indexed in Scilit:
- Growth and characterization of MgO-doped LiNbO3 for electro-optic devicesJournal of Crystal Growth, 1990
- Extremely high damage threshold of a new nonlinear crystal L-arginine phosphate and its deuterium compoundApplied Physics Letters, 1989
- Fifty Percent Conversion Efficiency Second Harmonic Generation In Magnesium Oxide Doped Lithium NiobatePublished by SPIE-Intl Soc Optical Eng ,1987
- Spectroscopic and electrical conductivity investigation of Mg doped LiNbO3 single crystalsSolid State Communications, 1986
- Increased optical damage resistance in lithium niobateApplied Physics Letters, 1984