Temperature Dependence of Decay Time of Photoluminescence from GaAs/Ga_0.6Al_0.4As Multi Quantum Well Structures

Publisher Website

1 March 1985

journal article
Published by IOP Publishing in Japanese Journal of Applied Physics

Vol. 24 (3R)
https://doi.org/10.1143/jjap.24.369

Abstract

No abstract available

This publication has 5 references indexed in Scilit:

Extrinsic photoluminescence from GaAs quantum wells
Physical Review B, 1982
Subnanosecond fluorescence-lifetime measuring system using single photon counting method with mode-locked laser excitation
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Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structures
Solid State Communications, 1981
Luminescence studies of optically pumped quantum wells in GaAs- ${Al}_{x} {Ga}_{1 - x} As$ multilayer structures
Physical Review B, 1980
Quantum-well heterostructure lasers
IEEE Journal of Quantum Electronics, 1980