Femtosecond Relaxation of Photoexcited Nonequilibrium Carriers in
- 29 August 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 51 (9) , 840-843
- https://doi.org/10.1103/physrevlett.51.840
Abstract
Optical saturation of highly excited states in the conduction band of a semiconductor and the subsequent extremely fast energy relaxation due to carrier-carrier and opticalphonon scattering at room temperature are observed. The corresponding measured life-time for states 160 meV above the band edge in As is in the range of 80 to 30 fs depending upon the photoexcited carrier density.
Keywords
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