High-electron-mobility AlGaN∕GaN heterostructures grown on Si(001) by molecular-beam epitaxy
- 23 September 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (13) , 133505
- https://doi.org/10.1063/1.2067698
Abstract
The growth of AlGaN∕GaN heterostructure on Si (001) substrates by molecular-beam epitaxy using ammonia as nitrogen precursor is reported. The structural, optical, and electrical properties of such heterostructures are assessed. It is shown that a two-dimensional electron gas is formed at the Al0.23Ga0.77N∕GaN interface. This type of heterostructure exhibits a sheet carrier density of 4.2×1012cm−2 with a mobility of 730cm2∕Vs at room temperature. Preliminary results concerning high-electron-mobility-transistor static characteristics are presented.Keywords
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