(2×4)/c(2×8) to (4×2)/c(8×2) transition on GaAs(001) surfaces

Abstract
We present scanning tunneling microscopy data illustrating the evolution of the decapped GaAs(001) surface following annealing in stages from 450 to 540 °C. After annealing at 450 °C a (2×4) reconstruction is formed by kinked rows of two As dimer unit cells. Following annealing in the 475–500 °C range small isolated regions of (4×2) reconstruction are visible, with a considerable increase in disorder of the remaining (2×4) reconstructed areas. Annealing at higher temperatures causes the (4×2) structure to become increasingly dominant. We have noted significant differences in the surface morphology as a function of annealing time. Our images of the (4×2) surface are similar to those recently reported by other groups but we propose a new structural model.

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