X-ray Topographic Study on Stacking Faults in Silicon Single Crystals
- 1 February 1964
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 3 (2) , 94-103
- https://doi.org/10.1143/jjap.3.94
Abstract
Various types of stacking faults are studied in more detail. Boundaries of stacking faults are concluded to be partial dislocations of the Shockley type. Stacking faults introduced by splitting of total dislocations into partial dislocations are also observed. By comparative studies of X-ray image with optical ones of the etched surface, it is found that some stacking faults consist of multi-planes of different dimensions.Keywords
This publication has 3 references indexed in Scilit:
- X-Ray Observations of Lattice Defects in Particular, Stacking Faults in the Neighbourhood of a Twin Boundary in Silicon Single CrystalsJournal of the Physics Society Japan, 1962
- Observations on the Polygonization of Bent LiF Crystals by the Berg-Barrent MethodJournal of the Physics Society Japan, 1961
- The projection topograph: a new method in X-ray diffraction microradiographyActa Crystallographica, 1959