Spin relaxation of excitons in zero-dimensional InGaAs quantum disks
- 16 March 1998
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (11) , 1341-1343
- https://doi.org/10.1063/1.120988
Abstract
We report the observation of spin relaxation of excitons in zero-dimensional semiconductor nanostructures. The spin relaxation is measured in InGaAs quantum disks by using a polarization dependent time-resolved photoluminescence method. The spin relaxation time in a zero-dimensional quantum disk is as long as 0.9 ns at 4 K, which is almost twice as long as the radiative recombination lifetime and is considerably longer than that in quantum wells. The temperature dependence of the spin relaxation time suggests the importance of exciton–acoustic phonon interaction.Keywords
This publication has 16 references indexed in Scilit:
- Semiconductor nanostructures formed by the Turing instabilityApplied Physics Letters, 1997
- Microscopic excitation spectroscopy for zero-dimensional quantized states of individual As/As quantum dotsPhysical Review B, 1996
- Spin relaxation in intrinsic GaAs quantum wells: Influence of excitonic localizationPhysical Review B, 1995
- Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200–30 nm diameter) self-organized on GaAs (311)B substratesApplied Physics Letters, 1994
- Self-organized growth of strained InGaAs quantum disksNature, 1994
- Exciton spin dynamics in quantum wellsPhysical Review B, 1993
- Spin-lattice relaxation inp-type gallium arsenide single crystalsPhysical Review B, 1988
- Luminescence linewidths of excitons in GaAs quantum wells below 150 KPhysical Review B, 1986
- Spin relaxation of photoelectrons in-type gallium arsenidePhysical Review B, 1977
- Theory of the Effect of Spin-Orbit Coupling on Magnetic Resonance in Some SemiconductorsPhysical Review B, 1954