Analysis of the Si-ON-Insulator Structure by Modeling of the Interface Atomic Arrangement
- 1 January 1983
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Solid-phase lateral epitaxy of chemical-vapor-deposited amorphous silicon by furnace annealingJournal of Applied Physics, 1983
- Theory of amorphous Siand. I. Atomic structural modelsPhysical Review B, 1982
- A structural model for the interface between amorphous and (100) crystalline siliconPhilosophical Magazine Part B, 1981
- Refinement of a random network model for vitreous silicon dioxidePhilosophical Magazine Part B, 1980
- CONTINUOUS-RANDOM-NETWORK MODELS FOR THE Si-SiO2 INTERFACEPublished by Elsevier ,1978
- Relaxed continuous random network modelsJournal of Non-Crystalline Solids, 1974
- The structure of vitreous silica: Validity of the random network theoryPhilosophical Magazine, 1972
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966