Intersubband carrier relaxation in highly excited GaAs/As multiple quantum wells
- 15 February 1990
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 41 (6) , 3688-3694
- https://doi.org/10.1103/physrevb.41.3688
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- Intersubband Auger recombination and population inversion in quantum-well subbandsPhysical Review B, 1989
- Role of discrete slab phonons in carrier relaxation in semiconductor quantum wellsPhysical Review Letters, 1989
- Electron scattering by confined LO polar phonons in a quantum wellPhysical Review B, 1989
- Multisubband electron transport in GaAs-Al/sub x/Ga/sub 1-x/As quantum wellsIEEE Journal of Quantum Electronics, 1988
- Ultrafast Phase Relaxation of Excitons via Exciton-Exciton and Exciton-Electron CollisionsPhysical Review Letters, 1986
- Hot carriers in quasi-2-D polar semiconductorsIEEE Journal of Quantum Electronics, 1986
- Femtosecond Excitation of Nonthermal Carrier Populations in GaAs Quantum WellsPhysical Review Letters, 1986
- Theory of transient excitonic optical nonlinearities in semiconductor quantum-well structuresPhysical Review B, 1985
- Subpicosecond Spectral Hole Burning Due to Nonthermalized Photoexcited Carriers in GaAsPhysical Review Letters, 1985
- Excitons and electron-hole plasma in quasi-two-dimensional systemsJournal of Luminescence, 1985