Giant ambipolar diffusion constant of n-i-p-i doping superlattices
- 21 January 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 66 (3) , 373-376
- https://doi.org/10.1103/physrevlett.66.373
Abstract
The analytical expression for the ambipolar in-plane diffusion constant of excess carriers in n-i-p-i doping superlattices is derived. Shockley-Haynes–type experiments quantitatively confirm the predicted huge enhancement of the diffusion constant (in the tested case by factors of about 300) and the long diffusion lengths.Keywords
This publication has 6 references indexed in Scilit:
- Efficient room-temperature operation of Cr3+-sensitized, flashlamp-pumped, 2µm lasersOptical and Quantum Electronics, 1990
- High-speed absorption recovery in quantum well diodes by diffusive electrical conductionApplied Physics Letters, 1989
- Temperature dependence of nonlinear absorption in InP doping superlatticesJournal of Applied Physics, 1988
- Coherent Raman BeatsPhysical Review A, 1973
- Electrical and Optical Properties of Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972