An optically-coupled high-voltage PNPN crosspoint array

1 January 1979

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 32-33
https://doi.org/10.1109/isscc.1979.1155915

Abstract

This report will cover a 1×4 optically-coupled PNPN crosspoint array. Breakdown voltage >450V, dv/dt firing >2000V/μs, and gate trigger LED current <20mA have been achieved, enabling direct interface with a conventional telephone set.

Keywords

OPTICAL ARRAYS
LIGHT EMITTING DIODES
VOLTAGE
CIRCUITS
TELEPHONY
SWITCHES
COSTS
SUBSTRATES
SPEECH
ELECTRONICS PACKAGING

This publication has 1 reference indexed in Scilit:

A low substrate leakage junction isolated p-n-p-n crosspoint array
IEEE Journal of Solid-State Circuits, 1978