InGaAs MOMBE — system drift and material quality
- 1 January 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 107 (1) , 1074-1075
- https://doi.org/10.1016/0022-0248(91)90616-d
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988