CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC
- 1 December 1991
- journal article
- Published by EDP Sciences in Journal de Physique IV
- Vol. 01 (C6) , C6-173
- https://doi.org/10.1051/jp4:1991626
Abstract
The paper presents diffusion-length and contrast data for large-grained polycrystalline silicon. Rapid thermal annealing was observed to improve the material quality whereas conventional annealing in evacuated quartz ampoules made the material worse. Evidence for significant potential barriers and conduction at certain grain boundaries and for gettering action of defects was foundKeywords
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