On the validity of the Einstein relation for nonequilibrium conditions

1 June 1970

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 58 (6) , 920-921
https://doi.org/10.1109/proc.1970.7802

Abstract

The flux equation governing the behavior of mobile particles in semiconductor material is derived from the Boltzmann transport equation. It is then shown that under suitable assumptions the Einstein relation frequently used in device analysis is valid for nonequilibrium conditions.

Keywords

VOLTAGE
SEMICONDUCTOR DIODES
SOLID STATE CIRCUITS
EQUATIONS
CIRCUIT TESTING
K-BAND
PLASMA DENSITY
ENVELOPE DETECTORS
RADIO FREQUENCY
COAXIAL COMPONENTS

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