Ellipsometric Study of the Plasma Oxidation of Tantalum
- 1 January 1974
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 121 (2) , 263-293
- https://doi.org/10.1149/1.2401794
Abstract
A copper displacement etching system (1) has been used as an effective and sensitive technique for the delineation and evaluation of crystal imperfections in polished silicon substrates. X‐ray topographs of the substrate prior to and after epitaxial deposition show a relationship between subsurface damage and/or contamination and defects in the epitaxial film.Keywords
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