Generation Kinetics of EL2 Centers in GaAs
- 1 January 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (1A) , L18
- https://doi.org/10.1143/jjap.27.l18
Abstract
The generation kinetics of EL2 centers is investigated by means of the optical absorption at low temperature with GaAs in which grown-in EL2 centers have previously been eliminated by annealing at 1200°C. An analysis of the experimental results with chemical rate equations shows that an EL2 center consists of at least three defects of elementary type. The activation energy for the generation of EL2 centers is determined to be about 2.5 eV. The results favor the picture that the kernel of an EL2 center consists of one AsGa antisite and two Ga vacancies.Keywords
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