Comment on ’’A systematic experimental and theoretical investigation of the grain-boundary resistivities of n-doped BaTiO3 ceramics’’
- 1 February 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (2) , 1156-1157
- https://doi.org/10.1063/1.326059
Abstract
In a recent paper Ihrig and Puschert reported on measurements of the current‐voltage characteristics and the temperature dependence of the effective zero resistivity of n‐type ceramic BaTiO3. They described their results using Heywang’s potential‐barrier model. In contradiction to other authors they denied a need to modify this model. It is shown here that the experimental results of Ihrig and Puschert are not detailed enough to warrant such a decision. The effect of an intergranular layer of a second phase on the grain‐boundary resistance of ceramic BaTiO3 is briefly discussed.This publication has 7 references indexed in Scilit:
- A systematic experimental and theoretical investigation of the grain-boundary resistivities of n-doped BaTiO3 ceramicsJournal of Applied Physics, 1977
- Widerstandsanomalie in halbleitender BaTiO3-keramik im Bereich unterhalb der CurietemperaturSolid-State Electronics, 1974
- Ein modell des korngrenzenwiderstandes in dotierter BaTiO3-keramikSolid-State Electronics, 1973
- Current-voltage characteristics and capacitance of single grain boundaries in semiconducting BaTiO3 ceramicsSolid-State Electronics, 1973
- Diffusion potentials in BaTiO3 and the theory of ptc materialsFerroelectrics, 1970
- Current-Voltage Characteristics of Semiconducting Barium Titanate CeramicJournal of Applied Physics, 1968
- Bariumtitanat als sperrschichthalbleiterSolid-State Electronics, 1961