Resonant tunneling of three-dimensional electrons into degenerate zero-dimensional levels
- 15 December 1991
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (24) , 13815-13818
- https://doi.org/10.1103/physrevb.44.13815
Abstract
A series of current peaks is observed at the onset of tunneling current in three-dimensionally confined tunneling diodes. The respective neighboring current peaks have an equivalent amplitude difference, which is independent of the diode lateral size. We interpret these peaks as being due to the tunneling of a three-dimensional emitter electron at the Fermi energy through the zero-dimensional well levels. The peak current is defined by the degeneracy of the zero-dimensional level confined by a harmonic lateral potential.Keywords
This publication has 8 references indexed in Scilit:
- Subband mixing effect in double-barrier diodes with a restricted lateral dimensionApplied Physics Letters, 1991
- Magnetotunneling in a coupled two-dimensional–one-dimensional electron systemPhysical Review B, 1991
- Resonant tunneling in submicron double-barrier heterostructuresApplied Physics Letters, 1991
- Resonant tunneling through one- and zero-dimensional states constricted by As/GaAs/As heterojunctions and high-resistance regions induced by focused Ga ion-beam implanationPhysical Review B, 1990
- Resonant tunneling through one-, two-, and three-dimensionally confined quantum wellsJournal of Applied Physics, 1989
- Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodesApplied Physics Letters, 1989
- Resonant tunneling in zero-dimensional nanostructuresPhysical Review B, 1989
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988