Testing Of VLSI Devices Using Electro-Optic Effects In Silicon
- 1 January 1987
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- p. 142-144
- https://doi.org/10.1117/12.967521
Abstract
The Kramers-Kronig relations have been used to determine the change in index of refraction for crystalline Silicon (Si) from absorption data. The Franz-Keldysh effect and the presence of free carriers both have an effect on the index of refraction of the pn junction diode. The results have been used to predict the sensitivity of a technique for measuring on-chip voltages in VLSI devices. A difference in sensitivity for PMOS and NMOS on a single substrate is calculated, in contrast to the simple theoretical result.Keywords
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