Low-leakage, high-efficiency, reliable VPE InGaAs 1.0-1.7 µm photodiodes
- 1 September 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 2 (9) , 217-219
- https://doi.org/10.1109/EDL.1981.25409
Abstract
High-quality InGaAs vapor-grown photodetectors for the 1.0-1.7 µm spectral region with a 100 µm diameter active area, ∼10-30 nA leakage current, 65-75 V breakdown voltage, 60-80% quantum efficiency, < 0.5 ns pulse rise time, < 1 pW/Hz1/2noise equivalent power and stable leakage current at 60°C for over 4000 hours are described.Keywords
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