Scaled GaAs MESFET's with gate length down to 100 nm
- 1 September 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (9) , 522-524
- https://doi.org/10.1109/EDL.1986.26459
Abstract
Fully ion-implanted GaAs depletion MESFET's with gate lengths from 1 µm down to 0.1 µm and with closely spaced source and drain contacts have been fabricated with electron-beam lithography. Gate-length dependence of transconductance, capacitance, output conductance, and threshold voltage is presented. Maximum transconductance obtained was 370 mS/mm for 0.1-µm gate length. The experimental data indicate that shallow implants do indeed result in better devices, but further vertical scaling of the devices is mandatory.Keywords
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