GaAs MESFETs with nonalloyed ohmic contacts: technology and performance

26 May 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (11) , 708-709
https://doi.org/10.1049/el:19880478

Abstract

GaAs MESFETs with nonalloyed ohmic contacts, achieved through a solid phase reaction of a Ge/Pd/GaAs (xtl) structure, have been realised and tested at DC and RF. Their contact resistivity and electrical performances are better than those of similar devices with conventional AuGeNi ohmic contacts.

Keywords

ELECTRICAL PERFORMANCES
ANNEALING
III-V SEMICONDUCTORS
NONALLOYED OHMIC CONTACTS
PDGE
GE-PD-GAAS
SOLID PHASE REACTION
CONTACT RESISTIVITY
DC CHARACTERISTICS
RF CHARACTERISTICS
MESFETS

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