A very-high-speed field-programmable gate array using metal-to-metal antifuse programmable elements
- 1 November 1992
- journal article
- Published by Elsevier in Microelectronics Journal
- Vol. 23 (7) , 561-568
- https://doi.org/10.1016/0026-2692(92)90067-b
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- IPEL-a novel ion-implanted electrically programmable elementIEEE Electron Device Letters, 1989
- Fundamentals of memory switching in vertical polycrystalline silicon structuresIEEE Transactions on Electron Devices, 1985