2-ps RC product new SI-BH laser structure for far over 20-GHz operation

Abstract
We designed a new all-MOVPE low-RC BH laser structure with semi-insulating (SI) InPlayers. This structure was designed to avoid a selective epitaxy step. The fabrication process consists of three MOVPE steps. An extremely low capacitance below 0.6 pP and the series resistance around 3 (RC product < 2 ps) of the laser structure was observed. Using this new structure a 1 .3 jtm bulk laser had a nicely smooth optical response with bandwidth in a large excess of 18GHz (our measurement limit). A fitting procedure, using the laser response transfer function, confirmed an neglecting RC product (2 ps), a power limited bandwidth of about 21 GHz and excellent RF modulation efficiency.