Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions
- 1 January 1987
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 16 (1) , 13-25
- https://doi.org/10.1007/bf02667786
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Acceptor doping of bridgman-grown CdxHg1−xTeJournal of Crystal Growth, 1985
- The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich meltsJournal of Crystal Growth, 1984
- The behaviour of selected impurities in CdxHg1−xTeJournal of Crystal Growth, 1982
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: III . Defect Structure of UndopedJournal of the Electrochemical Society, 1981
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: I . Defect Structure of Undoped and Copper DopedJournal of the Electrochemical Society, 1981
- Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: II . Defect Structure of Indium‐DopedJournal of the Electrochemical Society, 1981
- Liquid Phase Epitaxial Growth of ( Hg1 − x Cd x ) Te from Tellurium‐Rich Solutions Using a Closed Tube Tipping TechniqueJournal of the Electrochemical Society, 1981
- Liquidus isotherms, solidus lines and LPE growth in the Te-rich corner of the Hg-Cd-Te systemJournal of Electronic Materials, 1980
- Liquid Phase Growth of HgCdTe Epitaxial LayersJournal of the Electrochemical Society, 1980
- The Defect Structure of Phosphorus‐Doped CdTeJournal of the Electrochemical Society, 1977