Embrittlement of materials: Si(H) as a model system
- 2 December 1989
- journal article
- Published by Elsevier in Journal of Nuclear Materials
- Vol. 169, 179-184
- https://doi.org/10.1016/0022-3115(89)90533-3
Abstract
No abstract availableKeywords
This publication has 31 references indexed in Scilit:
- The nature and formation mechanism of anomalous defects in dislocation free FZ-silicon crystals caused by hydrogen dopingPhysica Status Solidi (a), 1982
- Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in siliconPhilosophical Magazine A, 1981
- Ion-induced defects in semiconductorsNuclear Instruments and Methods, 1981
- Hydrogen implantation in silicon between 1.5 and 60 kevRadiation Effects, 1976
- The Origin and Structures of the Anomalous Defects Observed in Silicon CrystalsJapanese Journal of Applied Physics, 1968
- X-Ray Observations of Anomalous Etch Patterns in Silicon CrystalsJapanese Journal of Applied Physics, 1967
- X-Ray Observations of Defect Structures in Silicon CrystalsJapanese Journal of Applied Physics, 1965
- Loop Shaped Images Observed in X-Ray Diffraction Micrographs of Silicon Single CrystalsJournal of the Physics Society Japan, 1962
- Models of grain boundaries in the diamond lattice I. Tilt about I 10Physica, 1959
- Dislocations in the diamond latticeJournal of Physics and Chemistry of Solids, 1958