Improved photoemitters using GaAs and InGaAs

1 January 1968

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE

Vol. 56 (9) , 1624-1625
https://doi.org/10.1109/PROC.1968.6682

Abstract

A luminous sensitivity of 900 µA/lm in a GaAs-Cs-O photocathode, and a photothreshold of 1.16 eV in an InGaAs photocathode with Cs-O or Cs-H2O surface layers, are reported.

Keywords

GALLIUM ARSENIDE
INDIUM GALLIUM ARSENIDE
SURFACE TREATMENT
DOPING
POLARIZATION
ANISOTROPIC MAGNETORESISTANCE
CATHODES
OPTICAL RESONATORS
COATINGS
PHOTONIC BAND GAP