1.53 μm DFB laser on semi-insulating InP substrate with very low threshold current
- 21 June 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (13) , 933-934
- https://doi.org/10.1049/el:19900609
Abstract
A novel GaInAsP DFB laser structure on a semi-insulating InP substrate is reported. A new contacting scheme is applied which allows both contacts to be placed on the wafer top while preserving the planar surface of the buried-heterostructure laser diode. CW threshold currents as low as7 mA have been measured at 25°C on 200 μm long devices. These are the lowest values reported for 1.5 μm DFB lasers on semi-insulating substrate.Keywords
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