Modeling of Sulfur Incorporation during Low Pressure CVD of GaAs (100) in the Ga ‐ HCl ‐ AsH3 ‐ H 2 ‐ H 2 S System
- 1 June 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (6) , 1433-1438
- https://doi.org/10.1149/1.2115865
Abstract
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