Electron beam defined delamination and ablation of carbon-diamond thin films on silicon

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Abstract
Defined delamination of thin carbon-diamond films on Si using a focused electron beam of 0.5 kW/cm2 power density is reported. The films were deposited form a CH4/Ar rf plasma and were less than 1 μm thick with residual compressive stress of 1.0–0.5 GPa. At higher electron beam power densities ablation and crystallization of the films are observed. Analysis of buckling patterns in spontaneously delaminated films give estimates of 128 J m2, 91 GPa and 0.5 for the intrinsic interface toughness, Young’s modulus and Poissons ratio of the films.