Inclusion of impact ionization in the backgating of GaAs FETs
- 1 August 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (8) , 342-345
- https://doi.org/10.1109/55.57928
Abstract
It is shown that the familiar threshold behavior of the backgate current of GaAs MESFETs has hysteresis. This is associated with an S-type negative differential conductivity (S-NDC) of the semi-insulating substrate. It is difficult to account for this hysteresis using conventional trap-fill-limited (TFL) theory, and it is attributed to the impact ionization of traps in the substrate. A simple model of this ionization, involving two trap levels, is used to incorporate its effect into an existing analytical model of GaAs FETs. The result is a qualitative interpretation of the backgating characteristics of GaAs MESFETs. The calculations show that a simple combination of two ohmic elements to represent parasitic resistances, and a nonohmic one to represent impact ionization in the substrate, can imitate the observed backgating behavior.Keywords
This publication has 10 references indexed in Scilit:
- Impact ionization of deep traps in semi-insulating GaAs substratesJournal of Applied Physics, 1990
- Mechanism of electrostatic potential conduction in semi-insulating substratesJournal of Applied Physics, 1989
- Instability and gate voltage noise in GaAs metal-semiconductor field-effect transistorsCanadian Journal of Physics, 1989
- Electron capture and emission for midgap centersJournal of Physics and Chemistry of Solids, 1988
- Mechanisms for low-frequency oscillations in GaAs FET'sIEEE Transactions on Electron Devices, 1987
- Nonequilibrium Phase Transitions in SemiconductorsPublished by Springer Nature ,1987
- GaAs Devices and CircuitsPublished by Springer Nature ,1987
- Analytical models of ion-implanted GaAs FET'sIEEE Transactions on Electron Devices, 1985
- Geometrical and light-induced effects on back-gating in ion-implanted GaAs MESFET'sIEEE Transactions on Electron Devices, 1985
- Bistability and nonequilibrium phase transitions in a semiconductor recombination model with impact ionization of donorsZeitschrift für Physik B Condensed Matter, 1982