LiNdP4O12 laser pumped with an AlxGa1−xAs electroluminescent diode
- 15 December 1975
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (12) , 682-684
- https://doi.org/10.1063/1.88337
Abstract
Using an incoherent AlxGa1−xAs light‐emitting diode (LED) as a pump source, pulsed laser oscillation was observed in a 300‐μm‐thick LiNdP4O12 crystal cooled to −35 °C. The oscillation threshold power density is 8.2 W/cm2 for the LED pump, and is compared with that for an Ar laser pump and theoretical values. The temperature dependence of oscillation threshold and optical round‐trip loss are discussed.Keywords
This publication has 4 references indexed in Scilit:
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- Nd-ultraphosphate laserApplied Physics Letters, 1973
- Room-Temperature cw Operation of a GaAs1−xPx Diode-Pumped YAG:Nd LaserApplied Physics Letters, 1971
- GaAs: Si LED Pumped Yb-Doped YAG LaserApplied Physics Letters, 1971