Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement
- 13 September 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (19) , 599-600
- https://doi.org/10.1049/el:19790430
Abstract
A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p=3×1018 cm−3 exhibit external quantum efficiency of 1% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (=7.0 kA/cm2).Keywords
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