Temperature dependence of gate forward turn-on voltage (Vf) of i-Al/sub 0.3/Ga/sub 0.7/As/n-GaAs HIGFET's

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1 April 1994

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 41 (4) , 614-615
https://doi.org/10.1109/16.278519

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes
Solid-State Electronics, 1969