Growth and characterization of Si1−xGex and Ge epilayers on (100) Si
- 15 June 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (12) , 5738-5746
- https://doi.org/10.1063/1.340312
Abstract
Two approaches to the growth of high‐quality epitaxial Ge epilayers on (100) Si have been investigated. The first consisted of compositional‐grading Si1−xGex layers and the use of strained‐layer superlattices as dislocation filters. In general, this method produced unsatisfactory results, due to the difficulty in achieving good epitaxial growth in the Ge concentration interval 30%−70%. The second approach consisted of simply depositing pure Ge directly on (100) Si. Excellent epitaxial films with dislocation densities of less than 107 cm−2 and smooth morphology were obtained after optimization of the growth parameters. The initial growth temperature and post‐growth annealing were found to be critical in obtaining good epitaxial material.This publication has 26 references indexed in Scilit:
- The growth of gallium arsenide on Si(100) by molecular-beam epitaxyCanadian Journal of Physics, 1987
- Defect reduction by thermal annealing of GaAs layers grown by molecular beam epitaxy on Si substratesApplied Physics Letters, 1987
- Dislocation filtering in semiconductor superlattices with lattice-matched and lattice-mismatched layer materialsApplied Physics Letters, 1986
- Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealingApplied Physics Letters, 1986
- Material properties of high-quality GaAs epitaxial layers grown on Si substratesJournal of Applied Physics, 1986
- Low threshold, optically pumped, room-temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge-coated Si substratesApplied Physics Letters, 1986
- Dislocation reduction in epitaxial GaAs on Si(100)Applied Physics Letters, 1986
- Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxyJournal of Applied Physics, 1985
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984