Fermi‐level pinning at the interfaces of Sb, Sn, and Ge on GaAs(110) surfaces

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Abstract
The interfaces of Sb, Sn, and Ge on GaAs(110) prepared at room temperature (RT) and 80 K low temperature (LT) have been studied using photoelectron spectroscopy. It is found that all the overlayers grow in a Stranski–Krastanov mode at RT, and the same growth mode holds at LT too. In contrast to many metals on GaAs(110) studied before, lack of temperature dependence of the Fermi‐level pinning behavior has been observed. Two distinct pinning positions are found (0.75 and 0.5 eV above the valence‐band maximum for n‐ and p‐type GaAs, respectively) at RT and LT. Defects are responsible for those pinnings. Additional change in the Fermi‐level position at the Sn/GaAs interface is related to the metallization of Sn overlayer.

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