New models for ohmic contacts to GaAs
- 31 October 1988
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 164, 435-439
- https://doi.org/10.1016/0040-6090(88)90173-3
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Diffusion model for Ohmic contacts to GaAsJournal of Vacuum Science & Technology A, 1988
- Diffusion of gallium in thin gold films on GaAsThin Solid Films, 1987
- Effect of annealing process parameters on the properties of AuGe ohmic contacts to GaAsJournal of Applied Physics, 1986
- Gallium-vacancy-dependent diffusion model of ohmic contacts to GaAsSolid-State Electronics, 1985
- Auger studies on rapid grain boundary diffusion of Ge through AuJournal of Vacuum Science & Technology A, 1984
- Electron microscope studies of an alloyed Au/Ni/Au-Ge ohmic contact to GaAsJournal of Applied Physics, 1983
- Thin-film interdiffusion. I. Au-Pd, Pd-Au, Ti-Pd, Ti-Au, Ti-Pd-Au, and Ti-Au-PdJournal of Applied Physics, 1975
- Metallurgical and electrical properties of alloyed Ni/AuGe films on n-type GaAsSolid-State Electronics, 1975
- CXXXVIII. Concentration contours in grain boundary diffusionJournal of Computers in Education, 1954
- Calculation of Diffusion Penetration Curves for Surface and Grain Boundary DiffusionJournal of Applied Physics, 1951