Interface properties of InAs‐MIS structures and their application to FET
- 1 January 1974
- journal article
- Published by Wiley in Electrical Engineering in Japan
- Vol. 94 (2) , 127-132
- https://doi.org/10.1002/eej.4390940217
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Capacitance voltage measurements on n-type InAs MOS diodesSolid-State Electronics, 1971
- Analysis of an InAs thin film transistorSolid-State Electronics, 1968
- Deposition and Properties of Aluminum Oxide Obtained by Pyrolytic Decomposition of an Aluminum AlkoxideJournal of the Electrochemical Society, 1967