Gain Saturation in Extrinsic Germanium Photoconductors Operating at Low Temperatures
- 1 January 1972
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 43 (1) , 188-194
- https://doi.org/10.1063/1.1660805
Abstract
A semiempirical model has been developed for the frequency dependence of the photoconductive response of high‐resistivity extrinsic Ge samples operating at cryogenic temperatures. The model predicts that the photoconductive gain saturates to the sweepout‐limited value of ½ for frequencies greater than G(0)/πτρ, where G(0) is the dc photoconductive gain and τρ=εε0ρ is the dielectric relaxation time. Measurements of signal as a function of modulation frequency and background for a large Ge : Hg sample at liquid neon (∼ 28°K) show good agreement with the model.This publication has 3 references indexed in Scilit:
- Sweepout and Dielectric Relaxation in Compensated Extrinsic PhotoconductorsPhysical Review B, 1971
- FREQUENCY DEPENDENCE OF THE DEBYE LENGTH IN COMPENSATED EXTRINSIC PHOTOCONDUCTORSApplied Physics Letters, 1970
- Relaxation Phenomena in High-Resistivity Ge:HgJournal of Applied Physics, 1967