Exciton Binding Energy in Small-Period GaAs/Ga (1- x ) Al x As Superlattices
- 15 August 1987
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 4 (4) , 461-466
- https://doi.org/10.1209/0295-5075/4/4/013
Abstract
We report the optical determination of exciton binding energies in small-period GaAs/Ga0.7Al0.3As superlattices by means of low-temperature photoluminescence excitation spectroscopy and photoluminescence spectroscopy as a function of temperature. The heavy-hole exciton binding energy decreases with decreasing superlattice period. Our experimental findings are in reasonable agreement with a variational calculation.Keywords
This publication has 15 references indexed in Scilit:
- Unambiguous observation of thestate of the light- and heavy-hole excitons in GaAs-(AlGa) As multiple-quantum-well structuresPhysical Review B, 1986
- Evidence for excitonic decay of excess charge carriers in high quality GaAs quantum wells at room temperatureApplied Physics Letters, 1986
- Effect of band hybridization on exciton states in GaAs-As quantum wellsPhysical Review B, 1985
- Vertical transport in GaAs/Ga1-xAlxAs superlattices observed by photoluminescenceSolid State Communications, 1985
- Size quantization and band-offset determination in GaAs-GaAlAs separate confinement heterostructuresPhysical Review B, 1985
- Excitons in GaAs quantum wellsJournal of Luminescence, 1985
- Magneto-optical determination of exciton binding energy in GaAs-quantum wellsPhysical Review B, 1984
- Energy levels of Wannier excitons in quantum-well structuresPhysical Review B, 1984
- Large room-temperature optical nonlinearity in GaAs/Ga1−x AlxAs multiple quantum well structuresApplied Physics Letters, 1982
- Exciton binding energy in quantum wellsPhysical Review B, 1982