Frequency limitations of transferred electron devices related to quality of contacts
- 1 May 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (5) , 787-791
- https://doi.org/10.1016/0038-1101(78)90013-8
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Very low resistance NiAuGeNi contacts to n-GaAsSolid-State Electronics, 1974
- Material selection for efficient transferred-electron devices at Q bandElectronics Letters, 1970
- Frequency Limit of LSA-Mode Oscillations Estimated from the Hot Electron Problems in the High Frequency Electric FieldJapanese Journal of Applied Physics, 1969
- Theoretical efficiency of the l.s.a. mode for gallium arsenide at frequencies above 10GHzElectronics Letters, 1968
- Doping uniformity and geometry of LSA oscillator diodesIEEE Transactions on Electron Devices, 1967