Growth of In. 53Ga. 47as layers on InP substrates for I.R. detectors by MBE
- 31 August 1984
- journal article
- Published by Elsevier in Materials Chemistry and Physics
- Vol. 11 (2) , 135-144
- https://doi.org/10.1016/0254-0584(84)90021-x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Microtwinning and growth defects in GaAs MBE layersJournal of Crystal Growth, 1982
- On the origin and elimination of macroscopic defects in MBE filmsJournal of Crystal Growth, 1981
- Révélation métallographique des défauts cristallins dans InPJournal of Crystal Growth, 1975
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975