Semiconductor Fast Neutron Detectors
- 1 June 1962
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IRE Transactions on Nuclear Science
- Vol. 9 (3) , 174-180
- https://doi.org/10.1109/TNS2.1962.4315990
Abstract
The application of semiconductor junction detectors to spectroscopy and flux monitoring for fast neutrons is discussed in terms of energy resolution and efficiency. The most useful forms of counter appear to be the proton-recoil and He3 filled detector arrangements, and the construction, performance and applications of such devices are described. A He3 filled detector has given an energy resolution of 150 keV for neutrons of 2-4 MeV with an efficiency approaching 10-5. Measurements are being made of the cross-sections for reactions induced in the silicon of the detectors by fast neutrons, an effect which limits the range of neutron energies for which the counters can be used. Radiation damage to detectors is briefly discussed.Keywords
This publication has 3 references indexed in Scilit:
- Interaction of 14-MeV. Neutrons with a Silicon Semiconductor Nuclear Particle DetectorNature, 1961
- The semiconductor surface barrier for nuclear particle detectionNuclear Instruments and Methods, 1961
- Cross Section for theSi28(n, p)Al28ReactionPhysical Review B, 1956